Infinitely high etch selectivity during CH2F2/H2 dual-frequency capacitively coupled plasma etching of silicon nitride to chemical vapor-deposited a-C

For fabrication of a multilevel resist (MLR) structure with silicon nitride (Si3N4) and amorphous carbon (a-C) layers, highly selective etching of the Si3N4 layer using a chemical vapor-deposited (CVD) a-C etch mask was investigated by varying the following process parameters in CH2F2/H2/Ar plasmas:...

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Veröffentlicht in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2010-07, Vol.28 (4), p.755-760
Hauptverfasser: Kim, J. S., Kwon, B. S., Heo, W., Jung, C. R., Park, J. S., Shon, J. W., Lee, N.-E.
Format: Artikel
Sprache:eng ; jpn
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Zusammenfassung:For fabrication of a multilevel resist (MLR) structure with silicon nitride (Si3N4) and amorphous carbon (a-C) layers, highly selective etching of the Si3N4 layer using a chemical vapor-deposited (CVD) a-C etch mask was investigated by varying the following process parameters in CH2F2/H2/Ar plasmas: etch gas flow ratio, high-frequency source power (PHF), and low-frequency source power (PLF) in a dual-frequency superimposed capacitively coupled plasma etcher. The results of etching the ArF photoresist/bottom antireflective coating/SiOx/CVD a-C/Si3N4 MLR structure showed the possibility of obtaining an infinitely high selective etch process for the Si3N4 layer using a thin CVD a-C etch mask for high aspect-ratio pattern formation. The CH2F2/H2 gas flow ratio was found to play a critical role in determining the process window for infinite Si3N4/CVD a-C etch selectivity, due to the change in the degree of polymerization on Si3N4 and CVD a-C surfaces.
ISSN:0734-2101
1520-8559
DOI:10.1116/1.3430551