Effects of AlxGa1−xN interlayer for GaN epilayer grown on Si substrate by metal-organic chemical-vapor deposition

GaN film grown on Si substrate using multilayer AlN/AlxGa1−xN buffer is studied by the low-pressure metal-organic chemical-vapor deposition method. The AlxGa1−xN films with Al composition varying from 1 to 0.66 were used to accommodate the stress induced between GaN and the Si substrate during GaN g...

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Veröffentlicht in:	Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2010-05, Vol.28 (3), p.473-477
Hauptverfasser:	Lin, Kung-Liang, Chang, Edward-Yi, Hsiao, Yu-Lin, Huang, Wei-Ching, Luong, Tien-Tung, Wong, Yuen-Yee, Li, Tingkai, Tweet, Doug, Chiang, Chen-Hao
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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