Highly conductive indium zinc oxide prepared by reactive magnetron cosputtering technique using indium and zinc metallic targets

Zn-doped In 2 O 3 film is frequently deposited from an oxide target; but the use of metallic target is increasingly expected as preparing the film with comparable properties. This work aimed to prepare a highly conductive and transparent Zn-doped In 2 O 3 thin film on Corning Eagle 2000 glass substrate by magnetron cosputtering method using indium and zinc targets. Structural characterization was performed using x-ray diffraction and x-ray photoelectron spectroscopy. The film had an amorphous structure when the film was prepared on an unheated substrate, but had an In 2 O 3 polycrystalline structure when the film was deposited on 150 and 300 ° C substrates. The electrical properties of the film were greatly affected by annealing; the Zn-doped In 2 O 3 film had a low resistivity of 6.1 × 10 − 4 Ω cm and an average transmittance of 81.7% when the film was deposited without substrate heating and followed a 600 ° C annealing.