Plasma doping two-dimensional characterization using low energy x-ray emission spectroscopy and full wafer secondary ion mass spectrometry/angle-resolved x-ray electron spectroscopy techniques

Several metrologies may be used to analyze plasma doping (PLAD) [S. Qin and A. McTeer, IEEE Trans. Electron Devices 54, 2497 (2007)] results, each with its own advantages and disadvantages. An investigation into the available characterization methods has been performed in order to reduce costs associated with the current qualification process, such as additional clean and annealing steps. This article will introduce an improved analytical method developed at Micron and demonstrate results of a correlation study between characterization techniques for B doped PLAD. The combined secondary ion mass spectrometry/angle-resolved x-ray electron spectroscopy two-dimensional (2D) dose mapping data provide excellent confirmation of the low energy x-ray emission spectroscopy (LEXES) 2D dose mapping data, and the nonuniformity from annealing can be deconvoluted from nonuniformities due to the implantation process. The data demonstrate that LEXES may replace the thermally processed R S measurement for tool and/or process qualifications.