Thermal stability of GeSbTe thin films deposited by layer-by-layer metalorganic chemical vapor deposition

The thermal stability of the GeSbTe (GST) films deposited by layer-by-layer metalorganic chemical vapor deposition on the planar Ti Al N ∕ Si and on trenches 120 nm in diameter and 500 nm deep (with aspect ratio of 4:1) was investigated under various annealing temperatures and durations in a nitroge...

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Veröffentlicht in:	Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2009-11, Vol.27 (6), p.L54-L57
Hauptverfasser:	Ahn, Jun-Ku, Park, Kyoung-Woo, Seong, Nak-Jin, Yoon, Soon-Gil
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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