Hot carrier degradation in HfSiON∕TiN fin shaped field effect transistor with different substrate orientations

Hot carrier degradation in HfSiON∕TiN fin shaped field effect transistor with different substrate orientations

Hot carrier injection (HCI) degradation is evaluated for n-metal oxide semiconductor (MOS) and pMOS high-κ-fin shaped field effect transistor with (100) and (110) sidewall surface orientations. It was found that impact ionization at the source, in addition to the traditional drain side enhances HCI...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2009-01, Vol.27 (1), p.468-471
Hauptverfasser: Young, Chadwin D., Yang, Ji-Woon, Matthews, Kenneth, Suthram, Sagar, Hussain, Muhammad Mustafa, Bersuker, Gennadi, Smith, Casey, Harris, Rusty, Choi, Rino, Lee, Byoung Hun, Tseng, Hsing-Huang
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Hot carrier injection (HCI) degradation is evaluated for n-metal oxide semiconductor (MOS) and pMOS high-κ-fin shaped field effect transistor with (100) and (110) sidewall surface orientations. It was found that impact ionization at the source, in addition to the traditional drain side enhances HCI degradation for the Vg=Vd condition. The degradation increases with decreasing fin length, with negligible dependence on substrate orientation.
ISSN:1071-1023
1520-8567
DOI:10.1116/1.3072919