Performance improvement of CuOx with gradual oxygen concentration for nonvolatile memory application

Performance improvement of CuOx with gradual oxygen concentration for nonvolatile memory application

The authors found CuOx thin film with gradual oxygen concentration (GOC) distribution enhances resistive switching characteristics for nonvolatile memory applications. By using Al/GOC CuOx∕Cu structure, not only no forming is needed but also the endurance of switching is greatly enhanced. The device...

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Veröffentlicht in:Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2008-05, Vol.26 (3), p.1030-1032
Hauptverfasser: Zhou, P., Lv, H. B., Yin, M., Tang, L., Song, Y. L., Tang, T. A., Lin, Y. Y., Bao, A., Wu, A., Cai, S., Wu, H., Liang, C., Chi, M. H.
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Sprache:eng
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Zusammenfassung:The authors found CuOx thin film with gradual oxygen concentration (GOC) distribution enhances resistive switching characteristics for nonvolatile memory applications. By using Al/GOC CuOx∕Cu structure, not only no forming is needed but also the endurance of switching is greatly enhanced. The device with GOC CuOx demonstrates resistance on/off ratio of greater than 100 and endurance of more than 12000cycles. The “forming-free” characteristics appear related to thinner CuO and the endurance enhancement appears related to gradual gradient of oxygen vacancies in CuOx. Thus, the thickness of CuO and distribution of oxygen (as well as vacancies) play important roles for performance improvement.
ISSN:1071-1023
1520-8567
DOI:10.1116/1.2927922