Surface characterization of ion-enhanced implanted photoresist removal
We characterize the chemical constitutents of high dose implanted deep ultraviolet photoresist before and after dual-mode oxygen plasma processing, where a remote rf-plasma source is operated simultaneously with rf bias. Raman spectroscopy indicates that the organic composition of the crust comprise...
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Veröffentlicht in: | Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2006-03, Vol.24 (2), p.657-663 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We characterize the chemical constitutents of high dose implanted deep ultraviolet photoresist before and after dual-mode oxygen plasma processing, where a remote rf-plasma source is operated simultaneously with rf bias. Raman spectroscopy indicates that the organic composition of the crust comprises a mixture of
s
p
2
graphite and
s
p
3
diamondlike carbon structures. High dose ion implantation reduces the hydrogen content by about 50 at. % as measured by hydrogen forward scattering and explains the reduced optical emission signal intensity observed during crust removal. The crust thicknesses extracted from the secondary-ion-mass spectroscopy profile correspond well to prior scanning electron microscopy characterization [Kawaguchi
et al.
, J. Vac. Sci. Technol. B (submitted)] and support the existence of a transitional layer between the hardened crust and the underlying photoresist. Angle-resolved x-ray photoelectron spectroscopy analysis of arsenic implanted photoresist shows that dual-mode plasma processing causes substantial oxidation deep into the bulk. This result contrasts with downstream plasma processing, which proceeds by a near-surface mechanism. In addition, surface arsenic levels increase by an order of magnitude, which suggests that ion bombardment does not significantly sputter the dopant. |
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ISSN: | 1071-1023 1520-8567 |
DOI: | 10.1116/1.2178367 |