Characterization of epitaxial germanium grown on (LaxY1−x)2O3∕Si(111) using different surfactants
The uniformity and quality of epitaxial, ultrathin germanium-on-insulator (GOI) layers are studied as a function of Ge regrowth under different surfactant conditions. It is shown that using antimony as a surfactant during the solid phase epitaxial regrowth of the germanium layers provides a higher c...
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Veröffentlicht in: | Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2005-05, Vol.23 (3), p.448-451 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | The uniformity and quality of epitaxial, ultrathin germanium-on-insulator (GOI) layers are studied as a function of Ge regrowth under different surfactant conditions. It is shown that using antimony as a surfactant during the solid phase epitaxial regrowth of the germanium layers provides a higher crystal quality and much flatter surfaces than samples grown without antimony. However, the diffusion of even a small percentage of a monolayer of antimony into the GOI layer may cause a thin n+ “delta-doped” layer to remain on the surface of the wafer, making device fabrication difficult. It is shown that using a surface layer of silicon as a surfactant that is not expected to interact electronically with the Ge (unlike Sb), acceptable surface smoothness may be achieved. Physical mechanisms behind this are discussed. |
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ISSN: | 0734-2101 1520-8559 |
DOI: | 10.1116/1.1875253 |