Growth of strained Si and strained Ge heterostructures on relaxed Si1−xGex by ultrahigh vacuum chemical vapor deposition

Numerous applications require the growth of planar strained-layer heterostructures on relaxed Si1−xGex. After briefly reviewing these applications as well as the challenges in growing such heterostructures, we provide experimental examples illustrating the influence of lattice mismatch, growth tempe...

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Veröffentlicht in:Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2004-01, Vol.22 (1), p.158-164
Hauptverfasser: Lee, Minjoo L., Pitera, Arthur J., Fitzgerald, E. A.
Format: Artikel
Sprache:eng
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Zusammenfassung:Numerous applications require the growth of planar strained-layer heterostructures on relaxed Si1−xGex. After briefly reviewing these applications as well as the challenges in growing such heterostructures, we provide experimental examples illustrating the influence of lattice mismatch, growth temperature, and film composition on the morphology of thin strained layers in the Ge–Si alloy system. Procedures for growing strained Si and strained Ge single and double heterostructures via ultrahigh vacuum chemical vapor deposition are described in detail. We demonstrate planar growth of strained Ge layers with lattice mismatches as high as 2%, planar Si layers on any Si1−xGex lattice constant, and double heterostructures that are comprised of a strained Ge layer capped with strained Si. Notably, the techniques described here have already been applied to the fabrication of extremely high mobility p- and n-channel metal–oxide–semiconductor field-effect transistors and germanium-on-insulator substrates.
ISSN:1071-1023
1520-8567
DOI:10.1116/1.1640397