Improved room-temperature continuous wave GaAs/AlGaAs and InGaAs/GaAs/AlGaAs lasers fabricated on Si substrates via relaxed graded GexSi1−x buffer layers

Improved GaAs/AlGaAs quantum well lasers were fabricated with longer lifetimes, higher efficiencies, and lower threshold current densities than previously reported devices on Ge/GeSi relaxed graded buffers on Si substrates. Uncoated broad-area lasers operated continuously at 858 nm with a differenti...

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Veröffentlicht in:	Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2003-05, Vol.21 (3), p.1064-1069
Hauptverfasser:	Groenert, Michael E., Pitera, Arthur J., Ram, Rajeev J., Fitzgerald, Eugene A.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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