High characteristic temperature (T 0 =243 K) of stacked InGaAs quantum wire lasers grown on (775)B GaAs substrates by molecular beam epitaxy
Stacked In 0.15 Ga 0.85 As quantum wire (QWR) laser structures were grown on (775)B-oriented GaAs substrates by molecular beam epitaxy. The laser active region consists of three 2.4-nm-thick QWR layers separated by thin (0.5 or 1 nm thick) AlAs barriers. It showed better one-dimensionality than that...
Gespeichert in:
| Veröffentlicht in: | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2002-05, Vol.20 (3), p.1270-1273 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1273 |
|---|---|
| container_issue | 3 |
| container_start_page | 1270 |
| container_title | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures |
| container_volume | 20 |
| creator | Ohno, Yasuhide Kanamori, Hironori Shimomura, Satoshi Hiyamizu, Satoshi |
| description | Stacked
In
0.15
Ga
0.85
As
quantum wire (QWR) laser structures were grown on (775)B-oriented GaAs substrates by molecular beam epitaxy. The laser active region consists of three 2.4-nm-thick QWR layers separated by thin (0.5 or 1 nm thick) AlAs barriers. It showed better one-dimensionality than that of nonstacked (775)B QWRs. The stacking (775)B QWR lasers oscillated at room temperature with the threshold current density of about 3
kA/cm
2
under the pulsed current condition. They showed the characteristic temperature of
T
0
∼243
K in the temperature range of 20–80 °C, which is very high not only
T
0
values of previous (775)B QWR lasers but also among those of the low-dimensional quantum structure lasers reported so far. |
| doi_str_mv | 10.1116/1.1456520 |
| format | Article |
| fullrecord | <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1116_1_1456520</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>scitation_primary_10_1116_1_1456520</sourcerecordid><originalsourceid>FETCH-LOGICAL-c363t-7005ab54160d9f108a96aaaa2dbca68db6badb1eaf9aaca63b34c0e2cc8cb8de3</originalsourceid><addsrcrecordid>eNp90M9Kw0AQBvBFFKzVg28wx1ZI3c0mm_TgQYu2xYKXCt7C7GbTRvPP3Y217-BDG23Rg-BcPhh-fAxDyDmjI8aYuGQjFoQi9OkB6bEuvDgU0SHp0YgHns_Y0zE5sfaZUipCznvkY5av1qDWaFA5bXLrcgVOl4026FqjYbAECld-wOF-CHUG1qF60SnMqyleW3htsXJtCZu8swVabSysTL2poK5gEEXh8Aa-oW2ldV2ntiC3UNaFVm2BBqTGEnSTO3zfnpKjDAurz_bZJ493t8vJzFs8TOeT64WnuODOiygNUYYBEzQdZ4zGOBbYjZ9KhSJOpZCYSqYxGyN2Gy55oKj2lYqVjFPN-2S461WmttboLGlMXqLZJowmX29MWLJ_Y2cvdtaq7kaX19UPfqvNL0yaNPsP_23-BG-Zgic</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>High characteristic temperature (T 0 =243 K) of stacked InGaAs quantum wire lasers grown on (775)B GaAs substrates by molecular beam epitaxy</title><source>AIP Journals Complete</source><creator>Ohno, Yasuhide ; Kanamori, Hironori ; Shimomura, Satoshi ; Hiyamizu, Satoshi</creator><creatorcontrib>Ohno, Yasuhide ; Kanamori, Hironori ; Shimomura, Satoshi ; Hiyamizu, Satoshi</creatorcontrib><description>Stacked
In
0.15
Ga
0.85
As
quantum wire (QWR) laser structures were grown on (775)B-oriented GaAs substrates by molecular beam epitaxy. The laser active region consists of three 2.4-nm-thick QWR layers separated by thin (0.5 or 1 nm thick) AlAs barriers. It showed better one-dimensionality than that of nonstacked (775)B QWRs. The stacking (775)B QWR lasers oscillated at room temperature with the threshold current density of about 3
kA/cm
2
under the pulsed current condition. They showed the characteristic temperature of
T
0
∼243
K in the temperature range of 20–80 °C, which is very high not only
T
0
values of previous (775)B QWR lasers but also among those of the low-dimensional quantum structure lasers reported so far.</description><identifier>ISSN: 0734-211X</identifier><identifier>ISSN: 1071-1023</identifier><identifier>EISSN: 1520-8567</identifier><identifier>DOI: 10.1116/1.1456520</identifier><identifier>CODEN: JVTBD9</identifier><language>eng</language><ispartof>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002-05, Vol.20 (3), p.1270-1273</ispartof><rights>American Vacuum Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c363t-7005ab54160d9f108a96aaaa2dbca68db6badb1eaf9aaca63b34c0e2cc8cb8de3</citedby><cites>FETCH-LOGICAL-c363t-7005ab54160d9f108a96aaaa2dbca68db6badb1eaf9aaca63b34c0e2cc8cb8de3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,776,780,785,786,790,4498,23909,23910,25118,27901,27902</link.rule.ids></links><search><creatorcontrib>Ohno, Yasuhide</creatorcontrib><creatorcontrib>Kanamori, Hironori</creatorcontrib><creatorcontrib>Shimomura, Satoshi</creatorcontrib><creatorcontrib>Hiyamizu, Satoshi</creatorcontrib><title>High characteristic temperature (T 0 =243 K) of stacked InGaAs quantum wire lasers grown on (775)B GaAs substrates by molecular beam epitaxy</title><title>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures</title><description>Stacked
In
0.15
Ga
0.85
As
quantum wire (QWR) laser structures were grown on (775)B-oriented GaAs substrates by molecular beam epitaxy. The laser active region consists of three 2.4-nm-thick QWR layers separated by thin (0.5 or 1 nm thick) AlAs barriers. It showed better one-dimensionality than that of nonstacked (775)B QWRs. The stacking (775)B QWR lasers oscillated at room temperature with the threshold current density of about 3
kA/cm
2
under the pulsed current condition. They showed the characteristic temperature of
T
0
∼243
K in the temperature range of 20–80 °C, which is very high not only
T
0
values of previous (775)B QWR lasers but also among those of the low-dimensional quantum structure lasers reported so far.</description><issn>0734-211X</issn><issn>1071-1023</issn><issn>1520-8567</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><recordid>eNp90M9Kw0AQBvBFFKzVg28wx1ZI3c0mm_TgQYu2xYKXCt7C7GbTRvPP3Y217-BDG23Rg-BcPhh-fAxDyDmjI8aYuGQjFoQi9OkB6bEuvDgU0SHp0YgHns_Y0zE5sfaZUipCznvkY5av1qDWaFA5bXLrcgVOl4026FqjYbAECld-wOF-CHUG1qF60SnMqyleW3htsXJtCZu8swVabSysTL2poK5gEEXh8Aa-oW2ldV2ntiC3UNaFVm2BBqTGEnSTO3zfnpKjDAurz_bZJ493t8vJzFs8TOeT64WnuODOiygNUYYBEzQdZ4zGOBbYjZ9KhSJOpZCYSqYxGyN2Gy55oKj2lYqVjFPN-2S461WmttboLGlMXqLZJowmX29MWLJ_Y2cvdtaq7kaX19UPfqvNL0yaNPsP_23-BG-Zgic</recordid><startdate>200205</startdate><enddate>200205</enddate><creator>Ohno, Yasuhide</creator><creator>Kanamori, Hironori</creator><creator>Shimomura, Satoshi</creator><creator>Hiyamizu, Satoshi</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>200205</creationdate><title>High characteristic temperature (T 0 =243 K) of stacked InGaAs quantum wire lasers grown on (775)B GaAs substrates by molecular beam epitaxy</title><author>Ohno, Yasuhide ; Kanamori, Hironori ; Shimomura, Satoshi ; Hiyamizu, Satoshi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c363t-7005ab54160d9f108a96aaaa2dbca68db6badb1eaf9aaca63b34c0e2cc8cb8de3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2002</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ohno, Yasuhide</creatorcontrib><creatorcontrib>Kanamori, Hironori</creatorcontrib><creatorcontrib>Shimomura, Satoshi</creatorcontrib><creatorcontrib>Hiyamizu, Satoshi</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ohno, Yasuhide</au><au>Kanamori, Hironori</au><au>Shimomura, Satoshi</au><au>Hiyamizu, Satoshi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High characteristic temperature (T 0 =243 K) of stacked InGaAs quantum wire lasers grown on (775)B GaAs substrates by molecular beam epitaxy</atitle><jtitle>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures</jtitle><date>2002-05</date><risdate>2002</risdate><volume>20</volume><issue>3</issue><spage>1270</spage><epage>1273</epage><pages>1270-1273</pages><issn>0734-211X</issn><issn>1071-1023</issn><eissn>1520-8567</eissn><coden>JVTBD9</coden><abstract>Stacked
In
0.15
Ga
0.85
As
quantum wire (QWR) laser structures were grown on (775)B-oriented GaAs substrates by molecular beam epitaxy. The laser active region consists of three 2.4-nm-thick QWR layers separated by thin (0.5 or 1 nm thick) AlAs barriers. It showed better one-dimensionality than that of nonstacked (775)B QWRs. The stacking (775)B QWR lasers oscillated at room temperature with the threshold current density of about 3
kA/cm
2
under the pulsed current condition. They showed the characteristic temperature of
T
0
∼243
K in the temperature range of 20–80 °C, which is very high not only
T
0
values of previous (775)B QWR lasers but also among those of the low-dimensional quantum structure lasers reported so far.</abstract><doi>10.1116/1.1456520</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0734-211X |
| ispartof | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002-05, Vol.20 (3), p.1270-1273 |
| issn | 0734-211X 1071-1023 1520-8567 |
| language | eng |
| recordid | cdi_crossref_primary_10_1116_1_1456520 |
| source | AIP Journals Complete |
| title | High characteristic temperature (T 0 =243 K) of stacked InGaAs quantum wire lasers grown on (775)B GaAs substrates by molecular beam epitaxy |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-03T23%3A56%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High%20characteristic%20temperature%20(T%200%20=243%20K)%20of%20stacked%20InGaAs%20quantum%20wire%20lasers%20grown%20on%20(775)B%20GaAs%20substrates%20by%20molecular%20beam%20epitaxy&rft.jtitle=Journal%20of%20Vacuum%20Science%20&%20Technology%20B:%20Microelectronics%20and%20Nanometer%20Structures&rft.au=Ohno,%20Yasuhide&rft.date=2002-05&rft.volume=20&rft.issue=3&rft.spage=1270&rft.epage=1273&rft.pages=1270-1273&rft.issn=0734-211X&rft.eissn=1520-8567&rft.coden=JVTBD9&rft_id=info:doi/10.1116/1.1456520&rft_dat=%3Cscitation_cross%3Escitation_primary_10_1116_1_1456520%3C/scitation_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |