Encapsulation materials for SrRuO3 to avoid H2 anneal-induced decomposition

Perovskite SrRuO3 (SRO) films are promising for use as electrodes for (Ba,Sr)TiO3 and Pb(Zr,Ti)O3 film capacitors. However, SrRuO3 decomposes during the forming gas (3% H2+balanced N2) anneal at temperatures as low as 200 °C. An adequate encapsulation layer for SrRuO3 is necessary in order to avoid...

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Veröffentlicht in:	Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2002-01, Vol.20 (1), p.84-86
Hauptverfasser:	Lin, Jun, Tsunoda, Kohji, Eguchi, Kazuhiro, Heida, Katsuhiko, Matsunaga, Daisuke
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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Zusammenfassung:	Perovskite SrRuO3 (SRO) films are promising for use as electrodes for (Ba,Sr)TiO3 and Pb(Zr,Ti)O3 film capacitors. However, SrRuO3 decomposes during the forming gas (3% H2+balanced N2) anneal at temperatures as low as 200 °C. An adequate encapsulation layer for SrRuO3 is necessary in order to avoid the H2 anneal-induced decomposition of SrRuO3. Al2O3,SiO2,Si3N4, and Si3N4/SiO2 are studied as encapsulation layers for SRO, and it is confirmed that Al2O3 and Si3N4/SiO2 coatings on SRO can effectively prevent its decomposition.
ISSN:	0734-2101 1520-8559
DOI:	10.1116/1.1424275