Silicon bonding for ultrahigh vaccuum surface science studies

A novel silicon bonding technique and its application for surface science studies in a wide temperature range of 30–1400 K is presented. The silicon single crystal is bonded on a polished tantalum plate via thin silver and tungsten interlayers deposited by evaporation in high vacuum. Upon annealing...

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Veröffentlicht in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2001-03, Vol.19 (2), p.706-708
Hauptverfasser: Gokhale, Shubha, Fink, Andreas, Trischberger, Peter, Eberle, Karl, Widdra, Wolf
Format: Artikel
Sprache:eng
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Zusammenfassung:A novel silicon bonding technique and its application for surface science studies in a wide temperature range of 30–1400 K is presented. The silicon single crystal is bonded on a polished tantalum plate via thin silver and tungsten interlayers deposited by evaporation in high vacuum. Upon annealing the silicon sample is bonded with a strong mechanical and good thermal contact. Several problems common to alternative sample mounting techniques are solved by this procedure. Excellent temperature control and small temperature gradients across the surface well below 1 K are demonstrated by thermal desorption data for two different adsorbates: ethane and hydrogen on Si (001)-(2×1).
ISSN:0734-2101
1520-8559
DOI:10.1116/1.1350997