Improved thermoelectric properties of layered Ti 1− x Nb x S 2− y Se y solid solutions
The thermoelectric properties of a series of the polycrystalline samples of titanium dichalcogenides with partial substitution of Ti for Nb and S for Se were investigated. It was found that sintering of the samples improved the thermoelectric efficiency ( ZT ), and the maximum ZT was achieved at sin...
Gespeichert in:
Veröffentlicht in: | Journal of the American Ceramic Society 2020-11, Vol.103 (11), p.6289-6297 |
---|---|
Hauptverfasser: | , , , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The thermoelectric properties of a series of the polycrystalline samples of titanium dichalcogenides with partial substitution of Ti for Nb and S for Se were investigated. It was found that sintering of the samples improved the thermoelectric efficiency (
ZT
), and the maximum
ZT
was achieved at sintering temperature of 600°C. A further increase in the sintering temperature (850°C and 950°C) led to the recrystallization of the samples, as a result, the Seebeck coefficient sharply decreased and electrical conductivity dramatically increased. The temperature dependences of electrical conductivity
σ
(
T
) in the temperature range from 4.2 to 300 K and Seebeck coefficient
S
(
T
) in the temperature range from 77 to 300 K were investigated in order to determine the nature of the observed improvements in thermoelectric properties due to double substitutions and sintering. Two‐dimensionalization of electron transport properties of Ti
1−
x
Nb
x
S
2−
y
Se
y
solid solutions was found. The Fermi energy
E
F2D
was estimated using the temperature dependences of Seebeck coefficient. The relationship between the Fermi energy
E
F
2
D
and figure of merit
ZT
was established. The effect of sintering on parameters
σ
(
T
),
S
(
T
), charge carrier concentration (
n
2D
), mobility (
µ
), and thermal conductivity (
k
) was found. The optimal value of Fermi energy
E
F2D
in terms of figure of merit
ZT
= 0.31 at room temperature (
T
= 300 K) was found for Ti
0.98
Nb
0.02
S
1.3
Se
0.7
sample sintered at 600°C. |
---|---|
ISSN: | 0002-7820 1551-2916 |
DOI: | 10.1111/jace.17342 |