Current-voltage and capacitance-voltage characteristics of heterostructure insulated-gate field-effect transistors

We present the results of theoretical and experimental studies of heterostructure insulated-gate field-effect transistors (HIG' FET's). We develop an improved charge-control model for the two-dimensional densities of electronand hole gases at the heterointerface. Our model provides an accurate description of the device behavior even at relatively low densities of two-dimensional gases. We obtain the current-voltage characteristics of HIGFET's using our charge-control model and account for the gate current. The theoretical calculations are in good agreement with the experimental measurements.