A new vertical power MOSFET structure with extremely reduced on-resistance

A new vertical power MOSFET structure with extremely reduced on-resistance

A new vertical power MOSFET structure called rectangular-grooved MOSFET (RMOS) is proposed, in which the vertical channels are provided along the sidewalls of the rectangular grooves formed by a reactive ion-beam etching (RIBE) technique. The structure is characterized by reduced ON-resistance and h...

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Veröffentlicht in:IEEE transactions on electron devices 1985-01, Vol.32 (1), p.2-6
Hauptverfasser: Ueda, D., Takagi, H., Kano, G.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Electric breakdown
Electronics
Etching
Exact sciences and technology
Immune system
Logic gates
MOSFET
Resistance
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Beschreibung
Zusammenfassung:A new vertical power MOSFET structure called rectangular-grooved MOSFET (RMOS) is proposed, in which the vertical channels are provided along the sidewalls of the rectangular grooves formed by a reactive ion-beam etching (RIBE) technique. The structure is characterized by reduced ON-resistance and high packing density. The relationship between the ON-resistance and the packing density in the new structure is calculated. It is demonstrated that the structure essentially possesses a lower ON-resistance per unit area than VMOS and DMOS structures. Experimental results are also described in detail.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1985.21900