A reliable approach to charge-pumping measurements in MOS transistors
A new and accurate approach to charge-pumping measurements for the determination of the Si-SiO 2 interface state density directly on MOS transistors is presented. By a careful analysis of the different processes of emission of electrons towards the conduction band and of holes towards the valence ba...
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Veröffentlicht in: | IEEE transactions on electron devices 1984-01, Vol.31 (1), p.42-53 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | A new and accurate approach to charge-pumping measurements for the determination of the Si-SiO 2 interface state density directly on MOS transistors is presented. By a careful analysis of the different processes of emission of electrons towards the conduction band and of holes towards the valence band, depending on the charge state of the interface, all the previously ill-understood phenomena can be explained and the deviations from the simple charge-pumping theory can be accounted for. The presence of a geometric component in some transistor configurations is illustrated and the influence of trapping time constants is discussed. Furthermore, based on this insight, a new technique is developed for the determination of the energy distribution of interface states in small-area transistors, without requiring the knowledge of the surface potential dependence on gate voltage. |
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ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/T-ED.1984.21472 |