InP:Fe photoconductors as photodetectors

InP:Fe photoconductors as photodetectors

Impulse response measurements of photoconductors fabricated from Fe-doped, semi-insulating InP crystals are described. Results show purely exponential decay transients with decay times which are inversely related to Fe concentrations. Photoconductive gains as high as 5 have been demonstrated in phot...

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Veröffentlicht in:IEEE Trans. Electron Devices; (United States) 1983-04, Vol.30 (4), p.412-415
Hauptverfasser: Hammond, R.B., Paulter, N.G., Wagner, R.S., Springer, T.E., Mac Roberts, M.D.J.
Format: Artikel
Sprache:eng
Schlagworte:
AMPLIFICATION
Crystals
DOPED MATERIALS
GAIN
III-V semiconductor materials
INDIUM COMPOUNDS
Indium phosphide
INDIUM PHOSPHIDES
Iron
MATERIALS
Optical pulses
OTHER INSTRUMENTATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
Photoconducting materials
PHOTOCONDUCTORS
PHOTODETECTORS
PNICTIDES 440300 > Miscellaneous Instruments-- (-1989)
PULSES
Transmission line measurements
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Zusammenfassung:Impulse response measurements of photoconductors fabricated from Fe-doped, semi-insulating InP crystals are described. Results show purely exponential decay transients with decay times which are inversely related to Fe concentrations. Photoconductive gains as high as 5 have been demonstrated in photoconductors with AuGe and AuSn contacts. Response times from 150 to 1000 ps are Observed.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1983.21138