Characteristics of a buried-channel graded drain with punchthrough stopper (BGP) MOS device
MOS device structures having a graded-drain (G), a buried-channel (B), and a punchthrough stopper (P) are realized by a triimplantation technique without additional masking. Combined effects of B, G, and P are experimentally investigated. Significant improvements in source-to-drain (S-D) breakdown v...
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| Veröffentlicht in: | IEEE transactions on electron devices 1982-04, Vol.29 (4), p.607-610 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext bestellen |
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| Zusammenfassung: | MOS device structures having a graded-drain (G), a buried-channel (B), and a punchthrough stopper (P) are realized by a triimplantation technique without additional masking. Combined effects of B, G, and P are experimentally investigated. Significant improvements in source-to-drain (S-D) breakdown voltage and the short-channel effect are observed in a BGP device. The BGP device structure will be durable for 5-V operation in the coming VLSI era. |
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| ISSN: | 0018-9383 1557-9646 |
| DOI: | 10.1109/T-ED.1982.20751 |