A 1024-element linear CCD photo sensor with unique photodiode structure

The development of a novel 1024-element linear CCD sensor is reported. The device incorporates a unique photodiode structure which includes a p-n junction diode for photo sensing and a surface MOS diode for charge storing. Only two power supplies are required to drive this device. The following good...

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Veröffentlicht in:	IEEE transactions on electron devices 1980-09, Vol.27 (9), p.1804-1808
Hauptverfasser:	Ohba, S., Aoki, M., Nakai, M., Shimada, S., Uchiumi, K., Fujita, M., Kubo, M.
Format:	Artikel
Sprache:	eng
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Beschreibung
Zusammenfassung:	The development of a novel 1024-element linear CCD sensor is reported. The device incorporates a unique photodiode structure which includes a p-n junction diode for photo sensing and a surface MOS diode for charge storing. Only two power supplies are required to drive this device. The following good results are obtained with this device: 1.0-lx . s saturation exposure, 0.5-V saturation output, ±2.5-percent signal nonuniformity, and a dark-current saturation time of 5 s at room temperature. The device is expected to find broad application in the facsimile reader field.
ISSN:	0018-9383 1557-9646
DOI:	10.1109/T-ED.1980.20107