Improved performance of GaAs microwave field-effect transistors with low inductance via-connections through the substrate

Reduced inductance via-connections to source electrodes through the substrate of GaAs MESFET's have been fabricated in a reproducible manner by means of etching, electroless gold plating, and electroplating. The short gold-plated source connections reduce the common-lead parasitic source induct...

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Veröffentlicht in:IEEE transactions on electron devices 1978-10, Vol.25 (10), p.1218-1221
Hauptverfasser: D'Asaro, L.A., DiLorenzo, J.V., Fukui, H.
Format: Artikel
Sprache:eng
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Zusammenfassung:Reduced inductance via-connections to source electrodes through the substrate of GaAs MESFET's have been fabricated in a reproducible manner by means of etching, electroless gold plating, and electroplating. The short gold-plated source connections reduce the common-lead parasitic source inductance by a large factor, resulting in gain increases of 2 dB at 4 GHz. At higher frequencies, the improvement over conventionally bonded transistors would become more pronounced.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1978.19255