Improved performance of GaAs microwave field-effect transistors with low inductance via-connections through the substrate
Reduced inductance via-connections to source electrodes through the substrate of GaAs MESFET's have been fabricated in a reproducible manner by means of etching, electroless gold plating, and electroplating. The short gold-plated source connections reduce the common-lead parasitic source induct...
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Veröffentlicht in: | IEEE transactions on electron devices 1978-10, Vol.25 (10), p.1218-1221 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Reduced inductance via-connections to source electrodes through the substrate of GaAs MESFET's have been fabricated in a reproducible manner by means of etching, electroless gold plating, and electroplating. The short gold-plated source connections reduce the common-lead parasitic source inductance by a large factor, resulting in gain increases of 2 dB at 4 GHz. At higher frequencies, the improvement over conventionally bonded transistors would become more pronounced. |
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ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/T-ED.1978.19255 |