A backside illuminated 400 × 400 charge-coupled device imager

A backside illuminated 400 × 400 charge-coupled device imager

Large-area backside illuminated charge-coupled device imagers have been fabricated using double level aluminum transfer electrode technology. Devices with 100 × 160 and 400 × 400 resolution elements have been fabricated using buried channel technology for high charge transfer efficiency. Detailed op...

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Veröffentlicht in:IEEE transactions on electron devices 1976-11, Vol.23 (11), p.1225-1232
Hauptverfasser: Antcliffe, G.A., Hornbeck, L.J., Chan, W.W., Walker, J.W., Rhines, W.C., Collins, D.R.
Format: Artikel
Sprache:eng
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Zusammenfassung:Large-area backside illuminated charge-coupled device imagers have been fabricated using double level aluminum transfer electrode technology. Devices with 100 × 160 and 400 × 400 resolution elements have been fabricated using buried channel technology for high charge transfer efficiency. Detailed optical characterization has been performed on these imagers over the temperature range -40 to +24°C and at several operating frequencies between 10 kHz and 1 MHz.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1976.18583