Behavior of surface ions on semiconductor devices

Behavior of surface ions on semiconductor devices

A study of the effects and behavior of surface ions on planar semiconductor devices has extended the theoretical understanding to include the case in which the total mobile surface ion density is determined by the net surface ion density induced by the surface potential on the oxide. We describe a u...

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Veröffentlicht in:IEEE transactions on electron devices 1968-12, Vol.15 (12), p.973-979
Hauptverfasser: Schlegel, E.S., Schnable, G.L., Schwarz, R.F., Spratt, J.P.
Format: Artikel
Sprache:eng
Schlagworte:
Conductivity
Electrodes
Ions
Mathematical model
Metals
Silicon
Temperature measurement
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Zusammenfassung:A study of the effects and behavior of surface ions on planar semiconductor devices has extended the theoretical understanding to include the case in which the total mobile surface ion density is determined by the net surface ion density induced by the surface potential on the oxide. We describe a useful test structure for the measurement of surface ion behavior and cite its advantages. We have measured the effects of time, humidity, temperature, voltage, and the previous testing history of the device on the behavior of surface ions.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1968.16548