High-frequency surface varactors
Experimental surface varactors constructed from germanium and silicon, with titanium dioxide films as a dielectric, are described. Measurements have been made to determine their behavior at frequencies up to 9 kMc. The capacitance ratio and specific capacitance change are in good agreement with the...
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Veröffentlicht in: | IEEE transactions on electron devices 1963-05, Vol.10 (3), p.143-149 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Experimental surface varactors constructed from germanium and silicon, with titanium dioxide films as a dielectric, are described. Measurements have been made to determine their behavior at frequencies up to 9 kMc. The capacitance ratio and specific capacitance change are in good agreement with the theory of surface varactors. The feasibility of high-frequency operation of this device is demonstrated on epitaxial-silicon surface varactors with zero-bias cutoff frequencies above 100kMc. From the analysis of the series resistance in practical structures, cutoff frequencies in the Teracycle range appear possible. |
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ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/T-ED.1963.15168 |