Advanced Method for Monitoring Copper Interconnect Process

Advanced Method for Monitoring Copper Interconnect Process

Stabilizing the copper interconnect process is the key to improving yield and reliability. A stable process for forming adequate grains in a copper film is important, but there is no proper method for monitoring the grains in that film. We introduce the micro-haze method, an advanced method for moni...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on semiconductor manufacturing 2008-11, Vol.21 (4), p.578-584
Hauptverfasser: Ishikawa, K., Nemoto, K., Funakoshi, T., Ohta, H.
Format: Artikel
Sprache:eng
Schlagworte:
Atomic force microscopy
CONNECTORS (ELECTRICAL)
Copper
Design of experiment
Forming
Grain boundaries
Grain size
GRAIN SIZE AND SHAPE
grain size of copper
Grains
Interconnections
Light scattering
micro-haze method
Monitoring
Rough surfaces
SCATTERING
SEMICONDUCTORS
Size control
Surface roughness
Transmission electron microscopy
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Stabilizing the copper interconnect process is the key to improving yield and reliability. A stable process for forming adequate grains in a copper film is important, but there is no proper method for monitoring the grains in that film. We introduce the micro-haze method, an advanced method for monitoring grain size using scattering light. We experimentally verified the effectiveness of the method and concluded that the method enables the monitoring the grains in a copper film.
ISSN:0894-6507
1558-2345
DOI:10.1109/TSM.2008.2005354