2-D Simulation of the Electron Density Characteristics of a Special Plasma Device

The purpose of this article is to study the influence of different powers, pressures, frequencies, and gases on the electron density distribution in special structures. A simulation model is established, and the electronic density in a special capacitance coupled plasma (CCP) device is calculated over the power range of 0-10 kW, pressure range of 0-50 Pa, and frequency range of 13.56-300 MHz. The results show that the power is a logarithmic function of the electron density in helium and argon plasmas, and the peak value for the electron density occurs in the diffusion region. At a certain power, collisions between particles increase with increasing pressure, which leads to an increase in electron density. However, the high electron density region in the helium plasma is concentrated near the electrode, while the high density region in the argon plasma moves from the center of the device to the electrode with increasing gas pressure. At the same time, the increase in the power frequency increases the ionization rate, and energy is transferred to the electrons, which increases the electron density. However, the rate of increase in the electron density decreases with increasing power frequency at the same voltage and pressure. With increasing power frequency, the 2-D electron density distribution in the argon and helium plasmas is found to vary in a similar way to that found for increasing pressure.