Operation of Pulse-Charged Spark Gap Triggered by GaAs Photoconductive Semiconductor Switch

The operation of a pulse-charged spark gap that is triggered by gallium arsenide (GaAs) photoconductive semiconductor switches (PCSSs) was investigated. By measuring the currents with the streamer discharge, we analyzed the mechanisms of breakdown between the semi-insulating GaAs PCSS and the spark...

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Veröffentlicht in:	IEEE transactions on plasma science 2010-10, Vol.38 (10), p.2888-2893
Hauptverfasser:	Xu, Ming, Shi, Wei, Hou, Lei, Ji, Weili, Zhang, Lin, Dai, Huiy
Format:	Artikel
Sprache:	eng
Schlagworte:	Breakdown Conductivity Discharge Discharges Electric currents Electric discharges Exact sciences and technology Gallium arsenide Gallium arsenide (GaAs) Gallium arsenides gas discharge High current Ionization Optical switches Other gas discharges photoconductive semiconductor switch (PCSS) Physics Physics of gases, plasmas and electric discharges Physics of plasmas and electric discharges Plasma Plasma devices Reproducibility Semiconductors spark gaps Sparks Switches Waveforms
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Zusammenfassung:	The operation of a pulse-charged spark gap that is triggered by gallium arsenide (GaAs) photoconductive semiconductor switches (PCSSs) was investigated. By measuring the currents with the streamer discharge, we analyzed the mechanisms of breakdown between the semi-insulating GaAs PCSS and the spark gap. Two similar combination setups were studied by different gap structures. It was shown that the PCSS was a good candidate for generating high current (as high as 5.6 kA) or ultrafast pulse with 220-ps rise time and 400-ps full-width at half-maximum accompanied with good reproducibilities of waveforms.
ISSN:	0093-3813 1939-9375
DOI:	10.1109/TPS.2010.2063039