Investigation and Comparison of Temperature-Sensitive Electrical Parameters of SiC mosfet at Extremely High Temperatures

Due to the excellent silicon carbide (SiC) material characteristics, SiC mosfet s can operate at extremely high temperatures and can be used in harsh environment applications. In this case, it is crucial to ensure the reliability of the power electronic systems. The temperature-sensitive electrical...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE transactions on power electronics 2023-08, Vol.38 (8), p.9660-9672
Hauptverfasser:	Lu, Xiaohui, Wang, Laili, Yang, Qingshou, Yang, Fengtao, Gan, Yongmei, Zhang, Hong
Format:	Artikel
Sprache:	eng
Schlagworte:	Delay time Delays Dynamic characteristics Electronic systems Extremely high temperatures High temperature High temperature effects JFETs Junctions Linearity Low temperature MOSFET online junction temperature monitoring Parameter sensitivity Room temperature sensitivity SiC <sc xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">mosfet Silicon carbide Temperature measurement Temperature sensors temperature-sensitive electrical parameters (TSEPs) Threshold voltage
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Due to the excellent silicon carbide (SiC) material characteristics, SiC mosfet s can operate at extremely high temperatures and can be used in harsh environment applications. In this case, it is crucial to ensure the reliability of the power electronic systems. The temperature-sensitive electrical parameters (TSEPs) have been used for online junction temperature monitoring to monitor the health condition of the SiC mosfet at low temperatures (
ISSN:	0885-8993 1941-0107
DOI:	10.1109/TPEL.2023.3267472