Online Gate-Oxide Degradation Monitoring of Planar SiC MOSFETs Based on Gate Charge Time

Gate-oxide degradation has been one of the critical reliability concerns of silicon carbide (SiC) metal-oxide-semiconductor-field-effect transistors ( mosfet s), which could be monitored through aging-sensitive parameters. In this article, an online gate-oxide degradation monitoring method for planar SiC mosfet s is proposed by extracting gate charge time at a specific range of gate voltage . It is based on the findings that the input capacitances of planar SiC mosfet s change significantly over gate-oxide degradation, which is theoretically analyzed and experimentally verified. The capacitance variations are converted into the gate charge time as the new aging-sensitive parameter. The new parameter measurement circuit is proposed and integrated into the gate driver module. The article results indicate that the new parameter varies noticeably with gate-oxide degradation and the difference of this parameter caused by junction temperature is much smaller than that caused by degradation. Besides, the parameter is immune to package degradation and load current. The condition monitoring method can be implemented online since the parameter is extracted during the off -state of SiC mosfet devices, which does not affect normal operation. The confirmatory experiment is carried out to verify the correctness of the proposed method.