An Extremely High Efficient Three-Level Active Neutral-Point-Clamped Converter Comprising SiC and Si Hybrid Power Stages
Three-level converters typically feature low switching loss and small filter size. In order to realize a high-power-density design for three-level converters, SiC MOSFETs may be selected instead of using Si insulated-gate bipolar transistors. However, all-SiC-MOSFET-based converters suffer from extr...
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Veröffentlicht in: | IEEE transactions on power electronics 2018-10, Vol.33 (10), p.8341-8352 |
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creator | Guan, Qing-Xin Li, Chushan Zhang, Yu Wang, Shuai Xu, Dewei David Li, Wuhua Ma, Hao |
description | Three-level converters typically feature low switching loss and small filter size. In order to realize a high-power-density design for three-level converters, SiC MOSFETs may be selected instead of using Si insulated-gate bipolar transistors. However, all-SiC-MOSFET-based converters suffer from extremely high total cost. In this paper, a SiC MOSFET and Si device hybrid active neutral-point-clamped (ANPC) converter is proposed. It consists of four Si active switches and only two SiC MOSFETs. Thus, it has lower total cost compared to the all-SiC-MOSFET-based ANPC converter. Furthermore, a dedicated modulation scheme is proposed to completely move all the switching events from Si devices to SiC MOSFETs by using redundant switching states. As a result, the switching losses are significantly reduced and extremely high efficiency is achieved. The proposed converter has fully utilized the low-switching-loss advantage of SiC MOSFETs and the low-cost advantage of Si devices, which shows significant superiority in high-end grid-connected inverter and rectifier applications. |
doi_str_mv | 10.1109/TPEL.2017.2784821 |
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In order to realize a high-power-density design for three-level converters, SiC MOSFETs may be selected instead of using Si insulated-gate bipolar transistors. However, all-SiC-MOSFET-based converters suffer from extremely high total cost. In this paper, a SiC MOSFET and Si device hybrid active neutral-point-clamped (ANPC) converter is proposed. It consists of four Si active switches and only two SiC MOSFETs. Thus, it has lower total cost compared to the all-SiC-MOSFET-based ANPC converter. Furthermore, a dedicated modulation scheme is proposed to completely move all the switching events from Si devices to SiC MOSFETs by using redundant switching states. As a result, the switching losses are significantly reduced and extremely high efficiency is achieved. The proposed converter has fully utilized the low-switching-loss advantage of SiC MOSFETs and the low-cost advantage of Si devices, which shows significant superiority in high-end grid-connected inverter and rectifier applications.</description><identifier>ISSN: 0885-8993</identifier><identifier>EISSN: 1941-0107</identifier><identifier>DOI: 10.1109/TPEL.2017.2784821</identifier><identifier>CODEN: ITPEE8</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Active neutral point clamped (ANPC) ; Converters ; hybrid power stage ; Insulated gate bipolar transistors ; MOSFET ; MOSFETs ; multilevel converter ; neutral point clamped (NPC) ; Rectifiers ; Semiconductor devices ; SiC ; Silicon ; Silicon carbide ; Switches ; Switching ; Switching loss ; Topology</subject><ispartof>IEEE transactions on power electronics, 2018-10, Vol.33 (10), p.8341-8352</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c293t-a7b7f8f7b798d7f2f3fbc581752a1e51ddf0e8a95460854883895902c32ef8be3</citedby><cites>FETCH-LOGICAL-c293t-a7b7f8f7b798d7f2f3fbc581752a1e51ddf0e8a95460854883895902c32ef8be3</cites><orcidid>0000-0001-6042-1219 ; 0000-0001-9704-2677 ; 0000-0001-7022-1755 ; 0000-0002-0345-5815 ; 0000-0002-4714-0233</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8231174$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8231174$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Guan, Qing-Xin</creatorcontrib><creatorcontrib>Li, Chushan</creatorcontrib><creatorcontrib>Zhang, Yu</creatorcontrib><creatorcontrib>Wang, Shuai</creatorcontrib><creatorcontrib>Xu, Dewei David</creatorcontrib><creatorcontrib>Li, Wuhua</creatorcontrib><creatorcontrib>Ma, Hao</creatorcontrib><title>An Extremely High Efficient Three-Level Active Neutral-Point-Clamped Converter Comprising SiC and Si Hybrid Power Stages</title><title>IEEE transactions on power electronics</title><addtitle>TPEL</addtitle><description>Three-level converters typically feature low switching loss and small filter size. 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The proposed converter has fully utilized the low-switching-loss advantage of SiC MOSFETs and the low-cost advantage of Si devices, which shows significant superiority in high-end grid-connected inverter and rectifier applications.</description><subject>Active neutral point clamped (ANPC)</subject><subject>Converters</subject><subject>hybrid power stage</subject><subject>Insulated gate bipolar transistors</subject><subject>MOSFET</subject><subject>MOSFETs</subject><subject>multilevel converter</subject><subject>neutral point clamped (NPC)</subject><subject>Rectifiers</subject><subject>Semiconductor devices</subject><subject>SiC</subject><subject>Silicon</subject><subject>Silicon carbide</subject><subject>Switches</subject><subject>Switching</subject><subject>Switching loss</subject><subject>Topology</subject><issn>0885-8993</issn><issn>1941-0107</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kM1OwzAQhC0EEqXwAIiLJc4pXifB9rGKCkWKoFLLOXKSdesqP8VxS_v2JGrFZWcPM7uaj5BHYBMApl5Wi1k64QzEhAsZSQ5XZAQqgoABE9dkxKSMA6lUeEvuum7LGEQxgxE5Ths6O3qHNVYnOrfrDZ0ZYwuLjaerjUMMUjxgRaeFtwekn7j3TlfBorWND5JK1zssadI2B3QeXb_VO2c726zp0iZUN2WvdH7KnS3pov3tLUuv19jdkxujqw4fLjom32-zVTIP0q_3j2SaBgVXoQ-0yIWRpp9KlsJwE5q8iCWImGvAGMrSMJRaxdErk3EkZShVrBgvQo5G5hiOyfP57s61P3vsfLZt967pX2acCR5JNoTGBM6uwrVd59BkfYtau1MGLBsAZwPgbACcXQD3madzxiLiv1_yEEBE4R-WbncB</recordid><startdate>20181001</startdate><enddate>20181001</enddate><creator>Guan, Qing-Xin</creator><creator>Li, Chushan</creator><creator>Zhang, Yu</creator><creator>Wang, Shuai</creator><creator>Xu, Dewei David</creator><creator>Li, Wuhua</creator><creator>Ma, Hao</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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In order to realize a high-power-density design for three-level converters, SiC MOSFETs may be selected instead of using Si insulated-gate bipolar transistors. However, all-SiC-MOSFET-based converters suffer from extremely high total cost. In this paper, a SiC MOSFET and Si device hybrid active neutral-point-clamped (ANPC) converter is proposed. It consists of four Si active switches and only two SiC MOSFETs. Thus, it has lower total cost compared to the all-SiC-MOSFET-based ANPC converter. Furthermore, a dedicated modulation scheme is proposed to completely move all the switching events from Si devices to SiC MOSFETs by using redundant switching states. As a result, the switching losses are significantly reduced and extremely high efficiency is achieved. The proposed converter has fully utilized the low-switching-loss advantage of SiC MOSFETs and the low-cost advantage of Si devices, which shows significant superiority in high-end grid-connected inverter and rectifier applications.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TPEL.2017.2784821</doi><tpages>12</tpages><orcidid>https://orcid.org/0000-0001-6042-1219</orcidid><orcidid>https://orcid.org/0000-0001-9704-2677</orcidid><orcidid>https://orcid.org/0000-0001-7022-1755</orcidid><orcidid>https://orcid.org/0000-0002-0345-5815</orcidid><orcidid>https://orcid.org/0000-0002-4714-0233</orcidid></addata></record> |
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subjects | Active neutral point clamped (ANPC) Converters hybrid power stage Insulated gate bipolar transistors MOSFET MOSFETs multilevel converter neutral point clamped (NPC) Rectifiers Semiconductor devices SiC Silicon Silicon carbide Switches Switching Switching loss Topology |
title | An Extremely High Efficient Three-Level Active Neutral-Point-Clamped Converter Comprising SiC and Si Hybrid Power Stages |
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