An Extremely High Efficient Three-Level Active Neutral-Point-Clamped Converter Comprising SiC and Si Hybrid Power Stages

Three-level converters typically feature low switching loss and small filter size. In order to realize a high-power-density design for three-level converters, SiC MOSFETs may be selected instead of using Si insulated-gate bipolar transistors. However, all-SiC-MOSFET-based converters suffer from extr...

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Veröffentlicht in:IEEE transactions on power electronics 2018-10, Vol.33 (10), p.8341-8352
Hauptverfasser: Guan, Qing-Xin, Li, Chushan, Zhang, Yu, Wang, Shuai, Xu, Dewei David, Li, Wuhua, Ma, Hao
Format: Artikel
Sprache:eng
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Zusammenfassung:Three-level converters typically feature low switching loss and small filter size. In order to realize a high-power-density design for three-level converters, SiC MOSFETs may be selected instead of using Si insulated-gate bipolar transistors. However, all-SiC-MOSFET-based converters suffer from extremely high total cost. In this paper, a SiC MOSFET and Si device hybrid active neutral-point-clamped (ANPC) converter is proposed. It consists of four Si active switches and only two SiC MOSFETs. Thus, it has lower total cost compared to the all-SiC-MOSFET-based ANPC converter. Furthermore, a dedicated modulation scheme is proposed to completely move all the switching events from Si devices to SiC MOSFETs by using redundant switching states. As a result, the switching losses are significantly reduced and extremely high efficiency is achieved. The proposed converter has fully utilized the low-switching-loss advantage of SiC MOSFETs and the low-cost advantage of Si devices, which shows significant superiority in high-end grid-connected inverter and rectifier applications.
ISSN:0885-8993
1941-0107
DOI:10.1109/TPEL.2017.2784821