Electron Irradiation Effect on Van Der Waals Transistor for High-Detectivity Near-Infrared Photodetectors

In this article, we present a study of electron irradiation effect on \alpha -In 2 Se 3 -based transistors for near-infrared photodetection. The dark current ( I_{\mathrm {dark}} ), photocurrent (I_{\mathrm {ph}}) , responsivity ( R ), external quantum efficiency (EQE), and specific detectivity ( D\ast ) of the photodetector have been investigated systematically after the irradiation. The defects induced by electron irradiation and the \alpha -In 2 Se 3 /air interface modified by the physical adsorption and chemical reaction have an important impact on the time annealing process. Compared with the parameters before irradiation, R and D\ast for a wavelength of 1064 nm have been increased by 46.24% and 53.08%, respectively, when the optical power intensity is 81.5~\mu \text{W} /cm 2 . Our results show that \alpha -In 2 Se 3 -based photodetectors have a potential application in the aerospace and nuclear industries.