Modeling of Near Zero-Field Magnetoresistance and Electrically Detected Magnetic Resonance in Irradiated Si/SiO 2 MOSFETs

Modeling of Near Zero-Field Magnetoresistance and Electrically Detected Magnetic Resonance in Irradiated Si/SiO 2 MOSFETs

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Veröffentlicht in:IEEE transactions on nuclear science 2020-07, Vol.67 (7), p.1669-1673
Hauptverfasser: Harmon, Nicholas J., Mcmillan, Stephen R., Ashton, James P., Lenahan, Patrick M., Flatte, Michael E.
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container_end_page 1673
container_issue 7
container_start_page 1669
container_title IEEE transactions on nuclear science
container_volume 67
creator Harmon, Nicholas J.
Mcmillan, Stephen R.
Ashton, James P.
Lenahan, Patrick M.
Flatte, Michael E.
description
doi_str_mv 10.1109/TNS.2020.2981495
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1109_TNS_2020_2981495</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1109_TNS_2020_2981495</sourcerecordid><originalsourceid>FETCH-LOGICAL-c885-9d3a68f8aa6aca048d581022615113028e2bd5847a0bbc02571dc89c8df7e2773</originalsourceid><addsrcrecordid>eNo1kD1PwzAURS0EEqWwM_oPpH124sYeUWmhUj8kkoklerFfKqOQIDtL_z0pLdPVvTq6w2HsWcBMCDDzcl_MJEiYSaNFZtQNmwildCJUrm_ZBEDoxGTG3LOHGL_GmilQE3ba9Y5a3x153_A9YeCfFPpk7al1fIfHjoY-UPRxwM4Sx87xVUt2CN5i2574Kw1jo3_WW_5Bse_-YN_xTQjoPJ6Bws8Lf-CS7w7FelXGR3bXYBvp6ZpTVo7z8j3ZHt42y5dtYrVWiXEpLnSjERdoETLtlBYg5UIoIVKQmmQ9TlmOUNcWpMqFs9pY7ZqcZJ6nUwaXWxv6GAM11U_w3xhOlYDqbK4azVVnc9XVXPoLehlhOg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Modeling of Near Zero-Field Magnetoresistance and Electrically Detected Magnetic Resonance in Irradiated Si/SiO 2 MOSFETs</title><source>IEEE Electronic Library (IEL)</source><creator>Harmon, Nicholas J. ; Mcmillan, Stephen R. ; Ashton, James P. ; Lenahan, Patrick M. ; Flatte, Michael E.</creator><creatorcontrib>Harmon, Nicholas J. ; Mcmillan, Stephen R. ; Ashton, James P. ; Lenahan, Patrick M. ; Flatte, Michael E.</creatorcontrib><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.2020.2981495</identifier><language>eng</language><ispartof>IEEE transactions on nuclear science, 2020-07, Vol.67 (7), p.1669-1673</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c885-9d3a68f8aa6aca048d581022615113028e2bd5847a0bbc02571dc89c8df7e2773</citedby><cites>FETCH-LOGICAL-c885-9d3a68f8aa6aca048d581022615113028e2bd5847a0bbc02571dc89c8df7e2773</cites><orcidid>0000-0002-4384-118X ; 0000-0002-8156-2261 ; 0000-0001-5093-1549</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Harmon, Nicholas J.</creatorcontrib><creatorcontrib>Mcmillan, Stephen R.</creatorcontrib><creatorcontrib>Ashton, James P.</creatorcontrib><creatorcontrib>Lenahan, Patrick M.</creatorcontrib><creatorcontrib>Flatte, Michael E.</creatorcontrib><title>Modeling of Near Zero-Field Magnetoresistance and Electrically Detected Magnetic Resonance in Irradiated Si/SiO 2 MOSFETs</title><title>IEEE transactions on nuclear science</title><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNo1kD1PwzAURS0EEqWwM_oPpH124sYeUWmhUj8kkoklerFfKqOQIDtL_z0pLdPVvTq6w2HsWcBMCDDzcl_MJEiYSaNFZtQNmwildCJUrm_ZBEDoxGTG3LOHGL_GmilQE3ba9Y5a3x153_A9YeCfFPpk7al1fIfHjoY-UPRxwM4Sx87xVUt2CN5i2574Kw1jo3_WW_5Bse_-YN_xTQjoPJ6Bws8Lf-CS7w7FelXGR3bXYBvp6ZpTVo7z8j3ZHt42y5dtYrVWiXEpLnSjERdoETLtlBYg5UIoIVKQmmQ9TlmOUNcWpMqFs9pY7ZqcZJ6nUwaXWxv6GAM11U_w3xhOlYDqbK4azVVnc9XVXPoLehlhOg</recordid><startdate>202007</startdate><enddate>202007</enddate><creator>Harmon, Nicholas J.</creator><creator>Mcmillan, Stephen R.</creator><creator>Ashton, James P.</creator><creator>Lenahan, Patrick M.</creator><creator>Flatte, Michael E.</creator><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-4384-118X</orcidid><orcidid>https://orcid.org/0000-0002-8156-2261</orcidid><orcidid>https://orcid.org/0000-0001-5093-1549</orcidid></search><sort><creationdate>202007</creationdate><title>Modeling of Near Zero-Field Magnetoresistance and Electrically Detected Magnetic Resonance in Irradiated Si/SiO 2 MOSFETs</title><author>Harmon, Nicholas J. ; Mcmillan, Stephen R. ; Ashton, James P. ; Lenahan, Patrick M. ; Flatte, Michael E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c885-9d3a68f8aa6aca048d581022615113028e2bd5847a0bbc02571dc89c8df7e2773</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Harmon, Nicholas J.</creatorcontrib><creatorcontrib>Mcmillan, Stephen R.</creatorcontrib><creatorcontrib>Ashton, James P.</creatorcontrib><creatorcontrib>Lenahan, Patrick M.</creatorcontrib><creatorcontrib>Flatte, Michael E.</creatorcontrib><collection>CrossRef</collection><jtitle>IEEE transactions on nuclear science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Harmon, Nicholas J.</au><au>Mcmillan, Stephen R.</au><au>Ashton, James P.</au><au>Lenahan, Patrick M.</au><au>Flatte, Michael E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Modeling of Near Zero-Field Magnetoresistance and Electrically Detected Magnetic Resonance in Irradiated Si/SiO 2 MOSFETs</atitle><jtitle>IEEE transactions on nuclear science</jtitle><date>2020-07</date><risdate>2020</risdate><volume>67</volume><issue>7</issue><spage>1669</spage><epage>1673</epage><pages>1669-1673</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><doi>10.1109/TNS.2020.2981495</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0002-4384-118X</orcidid><orcidid>https://orcid.org/0000-0002-8156-2261</orcidid><orcidid>https://orcid.org/0000-0001-5093-1549</orcidid></addata></record>
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title Modeling of Near Zero-Field Magnetoresistance and Electrically Detected Magnetic Resonance in Irradiated Si/SiO 2 MOSFETs
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-29T01%3A15%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Modeling%20of%20Near%20Zero-Field%20Magnetoresistance%20and%20Electrically%20Detected%20Magnetic%20Resonance%20in%20Irradiated%20Si/SiO%202%20MOSFETs&rft.jtitle=IEEE%20transactions%20on%20nuclear%20science&rft.au=Harmon,%20Nicholas%20J.&rft.date=2020-07&rft.volume=67&rft.issue=7&rft.spage=1669&rft.epage=1673&rft.pages=1669-1673&rft.issn=0018-9499&rft.eissn=1558-1578&rft_id=info:doi/10.1109/TNS.2020.2981495&rft_dat=%3Ccrossref%3E10_1109_TNS_2020_2981495%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true