New SEU Modeling Method for Calibrating Target System to Multiple Radiation Particles

This article proposes a method using electron and proton Single Event Upset sensitivities of a device to deduce all simulation parameters related to an RPP approach. It is shown that for 45-nm double data rate (DDR) memory, the RPP approach is still relevant and the crossing of proton and electron d...

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Veröffentlicht in:	IEEE transactions on nuclear science 2020-01, Vol.67 (1), p.44-49
Hauptverfasser:	Caron, P., Inguimbert, C., Artola, L., Bezerra, F., Ecoffet, R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Computer simulation Double data rate synchronous dynamic random access memory (DDR SRAM) electron-induced single event upset (SEU) Electronics Engineering Sciences heavy ion-induced SEU Heavy ions Parameter sensitivity Physics proton-induced SEU Protons Radiation Random access memory Sensitivity SEU Single event upsets Space Physics Surface treatment
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Beschreibung
Zusammenfassung:	This article proposes a method using electron and proton Single Event Upset sensitivities of a device to deduce all simulation parameters related to an RPP approach. It is shown that for 45-nm double data rate (DDR) memory, the RPP approach is still relevant and the crossing of proton and electron data makes it possible to constrain and properly define the associated parameters. Heavy ion prediction is also presented.
ISSN:	0018-9499 1558-1578
DOI:	10.1109/TNS.2019.2953995