Impact of Heavy Ion Energy on Charge Yield in Silicon Dioxide

Impact of Heavy Ion Energy on Charge Yield in Silicon Dioxide

The impact of heavy ion energy on charge yield in silicon dioxide was investigated by irradiating power VDMOSFETs with heavy ions at energies from 3 to 25 MeV/amu. The ion charge yield was determined by analyzing the gate voltage shifts of power VDMOSFETs induced by irradiation with 60 Co \gamma -r...

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Veröffentlicht in:IEEE transactions on nuclear science 2018-08, Vol.65 (8), p.1496-1502
Hauptverfasser: Emeliyanov, Vladimir V., Vatuev, Alexander S., Useinov, Rustem G.
Format: Artikel
Sprache:eng
Schlagworte:
Charge carrier density
charge yield
Dependence
Electric fields
Energy
Energy charge
heavy ion beams
Heavy ions
Ion charge
Ions
Irradiation
Logic gates
MOSFET
Radiation effects
Silicon
Silicon compounds
Silicon dioxide
single-event effect (SEE)
Spontaneous emission
Yield
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Zusammenfassung:The impact of heavy ion energy on charge yield in silicon dioxide was investigated by irradiating power VDMOSFETs with heavy ions at energies from 3 to 25 MeV/amu. The ion charge yield was determined by analyzing the gate voltage shifts of power VDMOSFETs induced by irradiation with 60 Co \gamma -rays and several different heavy ion species. A strong dependence of the charge yield on the ion energy is revealed. The charge yield at ion energy of 25 MeV/amu is greater by nearly an order of magnitude than that at the ion energy of 3 MeV/amu. The results are consistent with simulations of heavy ion track structures for low- and high-energy ions.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2018.2813669