Total-Ionizing-Dose Effects on a Graphene X-Ray Detector Laser-Scribed From Graphene Oxide

We have evaluated the total-ionizing-dose response of graphene-based X-ray detectors fabricated from graphene oxide (GO) via laser scribing. Raman characterization shows that the resulting structures exhibit the desired conversion of GO to graphene; both high- and low-resistance detectors are formed. The detectors are quite radiation sensitive, as demonstrated by fast pulse testing. The response time of the detectors degrades with total-ionizing dose exposure as a result of electron trapping at residual oxygen from unreacted GO and/or adsorbed oxygen on the graphene surface.