Total Dose Measurement Circuit Design Based on a Voltage Reference Topology

A circuit design for tracking radiation exposure in a CMOS integrated circuit is presented. The design can be scaled and integrated in a variety of CMOS processes. The presented design is based on a voltage reference circuit topology, where changes in voltage due to radiation degradation are amplifi...

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Veröffentlicht in:	IEEE transactions on nuclear science 2017-01, Vol.64 (1), p.559-566
Hauptverfasser:	Shetler, K. J., Holman, W. T., Kauppila, J. S., Witulski, A. F., Bhuva, B. L., Zhang, E. X., Massengill, L. W.
Format:	Artikel
Sprache:	eng
Schlagworte:	Analog Circuit design Circuit synthesis Degradation Design dosimetry Leakage currents MOSFET Radiation Resistors Threshold voltage Topology total ionizing dose Voltage Voltage measurement
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