SEB Hardened Power MOSFETs With High-K Dielectrics

Simulations of the SEB hardness of power MOSFETs are carried out with an experimentally calibrated structure. The effects of incorporating high permittivity gate dielectric layers and increasing channel doping concentration are investigated. The simulation results indicate that high-k dielectrics an...

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Veröffentlicht in:	IEEE transactions on nuclear science 2015-12, Vol.62 (6), p.2830-2836
Hauptverfasser:	Xin Wan, Wei Song Zhou, Shufeng Ren, Dao Guang Liu, Jun Xu, Han Liang Bo, En Xia Zhang, Schrimpf, Ronald D., Fleetwood, Daniel M., Ma, T. P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Dielectrics High-k dielectric High-K gate dielectrics Permittivity Power MOSFET power MOSFETs single-event burnout (SEB) TCAD simulation
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Beschreibung
Zusammenfassung:	Simulations of the SEB hardness of power MOSFETs are carried out with an experimentally calibrated structure. The effects of incorporating high permittivity gate dielectric layers and increasing channel doping concentration are investigated. The simulation results indicate that high-k dielectrics and high channel doping are promising methods to achieve SEB-hardened power MOSFETs. This offers a potential path to power MOSFETs that are resistant to SEB with thinner, more radiation-tolerant gate dielectrics.
ISSN:	0018-9499 1558-1578
DOI:	10.1109/TNS.2015.2498145