Atomistic Modeling of Suspended Carbon Nanotube Field Effect Transistors Under Proton Radiation

Atomistic Modeling of Suspended Carbon Nanotube Field Effect Transistors Under Proton Radiation

We present an atomistic model explaining spontaneous reductions of source-drain current in suspended carbon nanotube field effect transistors (CNT FETs) under proton irradiation. The non-equilibrium Green's function (NEGF) method is used to investigate the local density of states (LDOS) and tra...

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Veröffentlicht in:IEEE transactions on nuclear science 2015-12, Vol.62 (6), p.2881-2887
Hauptverfasser: LaGasse, Samuel W., Cress, Cory D., Hughes, Harold L., Ji Ung Lee
Format: Artikel
Sprache:eng
Schlagworte:
Carbon nanotube
Carbon nanotubes
field effect transistor (FET)
Field effect transistors
Green's function methods
Ions
Mathematical model
non-equilibrium Green's function (NEGF)
Proton radiation effects
quantum transport
transient effects
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Zusammenfassung:We present an atomistic model explaining spontaneous reductions of source-drain current in suspended carbon nanotube field effect transistors (CNT FETs) under proton irradiation. The non-equilibrium Green's function (NEGF) method is used to investigate the local density of states (LDOS) and transfer characteristics of the device. Our model suggests that ionized gas species within 20 nm of the CNT FET will act as an electrostatic gate, reducing current in the device for low back-gate voltages.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2015.2478002