An Investigation of Single Event Transient Response in 45-nm and 32-nm SOI RF-CMOS Devices and Circuits

An Investigation of Single Event Transient Response in 45-nm and 32-nm SOI RF-CMOS Devices and Circuits

This paper uses charge deposition by two-photon absorption to present the first investigation of the physical mechanisms underlying the single event transient (SET) response of cascode structures in a 45-nm RF-CMOS/SOI technology, provides the first experimental comparison of SET between 45-nm and 3...

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Veröffentlicht in:IEEE transactions on nuclear science 2013-12, Vol.60 (6), p.4405-4411
Hauptverfasser: England, Troy D., Arora, Rajan, Fleetwood, Zachary E., Lourenco, Nelson E., Moen, Kurt A., Cardoso, Adilson S., McMorrow, Dale, Roche, Nicolas J.-H, Warner, Jeffery H., Buchner, Stephen P., Paki, Pauline, Sutton, Akil K., Freeman, Greg, Cressler, John D.
Format: Artikel
Sprache:eng
Schlagworte:
Calibration
Cascode amplifier
Charge deposition
Circuit design
Circuits
CMOS integrated circuits
Devices
Radio frequency
RF CMOS
Silicon-on-insulator
Simulation
single event transient
Single event transients
Transient analysis
Transient responses
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Beschreibung
Zusammenfassung:This paper uses charge deposition by two-photon absorption to present the first investigation of the physical mechanisms underlying the single event transient (SET) response of cascode structures in a 45-nm RF-CMOS/SOI technology, provides the first experimental comparison of SET between 45-nm and 32-nm RF-CMOS/SOI devices, and presents implications for circuit design in both technologies. This work leverages a number of different device types and is supported by calibrated TCAD simulations.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2013.2289368