Displacement Damage Effects in AlGaN/GaN High Electron Mobility Transistors

Displacement Damage Effects in AlGaN/GaN High Electron Mobility Transistors

We present the results of a radiation damage experiment on {\rm Al}_{\rm x}{\rm Ga}_{1-{\rm x}}{\rm N/GaN} high electron mobility transistors. The basic mechanism underlying the observed high radiation tolerance appears to be a strong internal piezoelectric field near the two-dimensional electron ga...

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Veröffentlicht in:IEEE transactions on nuclear science 2012-12, Vol.59 (6), p.3077-3080
Hauptverfasser: Weaver, B. D., Martin, P. A., Boos, J. B., Cress, C. D.
Format: Artikel
Sprache:eng
Schlagworte:
Aluminum
Displacement
Displacement damage
Gallium
Gallium nitride
Gallium nitrides
HEMTs
High electron mobility transistors
Piezoelectricity
proton irradiation
Proton radiation effects
Radiation tolerance
Semiconductor devices
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Zusammenfassung:We present the results of a radiation damage experiment on {\rm Al}_{\rm x}{\rm Ga}_{1-{\rm x}}{\rm N/GaN} high electron mobility transistors. The basic mechanism underlying the observed high radiation tolerance appears to be a strong internal piezoelectric field near the two-dimensional electron gas that causes scattered carriers to be reinjected.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2012.2224371