Radiation-Induced Oxide Charge in Low- and High-H Environments

Electronic structure calculations and irradiation measurements are used to obtain insight into oxide trapped charge mechanisms in varying hydrogen ambients. Quantitative agreement between measured and simulated oxide and interface-trap charge densities is obtained over a wide range of H _{2} concent...

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Veröffentlicht in:	IEEE transactions on nuclear science 2012-08, Vol.59 (4), p.755-759
Hauptverfasser:	Rowsey, Nicole L., Law, Mark E., Schrimpf, Ronald D., Fleetwood, Daniel M., Tuttle, Blair R., Pantelides, Sokrates T.
Format:	Artikel
Sprache:	eng
Schlagworte:	Charge carrier processes Energy barrier Mathematical model N_{\rm it} N_{\rm ot} Protons radiation-induced oxide charge Silicon
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