Radiation-Induced Oxide Charge in Low- and High-H Environments

Electronic structure calculations and irradiation measurements are used to obtain insight into oxide trapped charge mechanisms in varying hydrogen ambients. Quantitative agreement between measured and simulated oxide and interface-trap charge densities is obtained over a wide range of H _{2} concent...

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Veröffentlicht in:IEEE transactions on nuclear science 2012-08, Vol.59 (4), p.755-759
Hauptverfasser: Rowsey, Nicole L., Law, Mark E., Schrimpf, Ronald D., Fleetwood, Daniel M., Tuttle, Blair R., Pantelides, Sokrates T.
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Sprache:eng
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Zusammenfassung:Electronic structure calculations and irradiation measurements are used to obtain insight into oxide trapped charge mechanisms in varying hydrogen ambients. Quantitative agreement between measured and simulated oxide and interface-trap charge densities is obtained over a wide range of H _{2} concentrations by implementing first-principles calculations of the energetics, and dynamics of charge transport and trapping, into TCAD simulations of irradiated MOS structures. Hole trapping dominates for typical H _{2} densities, but protons can dominate at high H _{2} densities. The rate of the interface trap reaction, in which protons that are liberated from charged oxygen vacancies by molecular hydrogen form dangling bonds on the interface, is found to play a key role in determining the relative concentrations of oxide and interface-trap charge densities.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2012.2183889