Effect of Radiation Exposure on the Endurance of Commercial nand Flash Memory

We have compared the endurance of irradiated commercial NAND flash memories with that of unirradiated controls. Radiation exposure has little or no effect on the endurance of flash memories. Results are discussed in light of the relevant models for electron and hole trapping.

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Bibliographische Detailangaben
Veröffentlicht in:	IEEE transactions on nuclear science 2009-12, Vol.56 (6), p.3280-3284
Hauptverfasser:	Oldham, T.R., Friendlich, M., Carts, M.A., Seidleck, C.M., LaBel, K.A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Charge carrier processes Control equipment Durability Electron traps Endurance Error correction codes Flash memory Flash memory (computers) ionizing radiation Irradiation Manufacturing NASA Nonvolatile memory Power supplies reliability Space technology System testing Trapping
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