Effect of Radiation Exposure on the Endurance of Commercial nand Flash Memory

Effect of Radiation Exposure on the Endurance of Commercial nand Flash Memory

We have compared the endurance of irradiated commercial NAND flash memories with that of unirradiated controls. Radiation exposure has little or no effect on the endurance of flash memories. Results are discussed in light of the relevant models for electron and hole trapping.

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Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on nuclear science 2009-12, Vol.56 (6), p.3280-3284
Hauptverfasser: Oldham, T.R., Friendlich, M., Carts, M.A., Seidleck, C.M., LaBel, K.A.
Format: Artikel
Sprache:eng
Schlagworte:
Charge carrier processes
Control equipment
Durability
Electron traps
Endurance
Error correction codes
Flash memory
Flash memory (computers)
ionizing radiation
Irradiation
Manufacturing
NASA
Nonvolatile memory
Power supplies
reliability
Space technology
System testing
Trapping
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Beschreibung
Zusammenfassung:We have compared the endurance of irradiated commercial NAND flash memories with that of unirradiated controls. Radiation exposure has little or no effect on the endurance of flash memories. Results are discussed in light of the relevant models for electron and hole trapping.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2009.2034463