Total Dose Effects in CMOS Trench Isolation Regions

Total Dose Effects in CMOS Trench Isolation Regions

A model for inversion in trench isolation is developed using an analytical model to calculate the surface charge density along the trench sidewall. The model shows that the inversion path takes place well below the trench corner for devices with 180 nm feature size. The increased hardness of highly...

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Veröffentlicht in:IEEE transactions on nuclear science 2009-08, Vol.56 (4), p.1941-1949
Hauptverfasser: Johnston, A.H., Swimm, R.T., Allen, G.R., Miyahira, T.F.
Format: Artikel
Sprache:eng
Schlagworte:
Analytical models
CMOS
CMOS technology
Corners
Density
Devices
Doping
Hardness
Inversions
ionizing dose
Ionizing radiation
Mathematical analysis
Propulsion
Radiation effects
scaling
Semiconductor device modeling
Semiconductor process modeling
shallow trench isolation
space radiation
Space technology
Testing
Trenches
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Beschreibung
Zusammenfassung:A model for inversion in trench isolation is developed using an analytical model to calculate the surface charge density along the trench sidewall. The model shows that the inversion path takes place well below the trench corner for devices with 180 nm feature size. The increased hardness of highly scaled devices is caused by a combination of higher doping levels and a decrease in the lateral charge collection path within the trench.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2009.2019273