LET Dependence of Single Event Transient Pulse-Widths in SOI Logic Cell

LET Dependence of Single Event Transient Pulse-Widths in SOI Logic Cell

Single event transient (SET) pulse-widths were measured as a function of linear energy transfer (LET) by using pulse capture circuits and simulated with mixed-mode 3-D device simulations. We found that the carrier recombination process dominates the LET dependence of the pulse-widths.

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Veröffentlicht in:IEEE transactions on nuclear science 2009-02, Vol.56 (1), p.202-207
Hauptverfasser: Makino, T., Kobayashi, D., Hirose, K., Yanagawa, Y., Saito, H., Ikeda, H., Takahashi, D., Ishii, S., Kusano, M., Onoda, S., Hirao, T., Ohshima, T.
Format: Artikel
Sprache:eng
Schlagworte:
Capture (nuclear)
Carrier recombination
Circuit simulation
Circuit testing
Circuits
Devices
Energy exchange
Energy transfer
Extraterrestrial measurements
Logic
Logic cell
Pulse circuits
Pulse inverters
Pulse measurements
Pulse width modulation inverters
Simulation
single event transient
SOI
Space vector pulse width modulation
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Beschreibung
Zusammenfassung:Single event transient (SET) pulse-widths were measured as a function of linear energy transfer (LET) by using pulse capture circuits and simulated with mixed-mode 3-D device simulations. We found that the carrier recombination process dominates the LET dependence of the pulse-widths.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2008.2009054