Ion Beam Induced Charge Studies of CdZnTe Grown by Modified Vertical Bridgman Method

Ion Beam Induced Charge Studies of CdZnTe Grown by Modified Vertical Bridgman Method

Ion beam induced charge (IBIC) and time resolved digital IBIC techniques have been used to map the electronic properties of CdZnTe manufactured by Yinnel Tech Inc. The 2 MeV proton scanning microbeam at the University of Surrey Ion Beam Centre was used to map the charge transport properties of both...

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Veröffentlicht in:IEEE transactions on nuclear science 2008-12, Vol.55 (6), p.3741-3745
Hauptverfasser: Veale, M.C., Sellin, P.J., Parkin, J., Lohstroh, A., Davies, A.W., Seller, P.
Format: Artikel
Sprache:eng
Schlagworte:
Bridgman method
Cadmium zinc tellurides
CdZnTe
Charge
Charge carrier processes
Charge transport
charge transport properties
Crystal growth
Detectors
digital pulse processing
IBIC
Ion beams
Microorganisms
Particle beams
Preamplifiers
Protons
Pulse amplifiers
Pulse measurements
Temperature
trapping
Variability
Voltage
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Zusammenfassung:Ion beam induced charge (IBIC) and time resolved digital IBIC techniques have been used to map the electronic properties of CdZnTe manufactured by Yinnel Tech Inc. The 2 MeV proton scanning microbeam at the University of Surrey Ion Beam Centre was used to map the charge transport properties of both holes and electrons at room temperature. The electron response of the detector showed good uniformity whereas the hole response showed significant variations across the bulk.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2008.2006745