The Role of Ion Track Structure on High-Injection Carrier Dynamics in High-Speed Si and III-V Optoelectronic Sensors
The role of ion track structure on high-injection carrier dynamics in a high-speed GaAs p + -n-n + sensor is investigated using laser and high-energy heavy ion microbeams. The results are compared to similar data collected on a Si p + -n-n + device where space charge screening effects (SCSE) result...
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| Veröffentlicht in: | IEEE transactions on nuclear science 2007-12, Vol.54 (6), p.2384-2393 |
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| container_title | IEEE transactions on nuclear science |
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| creator | Laird, J.S. Onoda, S. Hirao, T. Edmonds, L. Ohshima, T. |
| description | The role of ion track structure on high-injection carrier dynamics in a high-speed GaAs p + -n-n + sensor is investigated using laser and high-energy heavy ion microbeams. The results are compared to similar data collected on a Si p + -n-n + device where space charge screening effects (SCSE) result in transient shape being dependent on ion track structure. The results collected are discussed within the framework of the Edmonds charge collection model and generalized to III-V optoelectronic sensors. |
| doi_str_mv | 10.1109/TNS.2007.911421 |
| format | Article |
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The results are compared to similar data collected on a Si p + -n-n + device where space charge screening effects (SCSE) result in transient shape being dependent on ion track structure. The results collected are discussed within the framework of the Edmonds charge collection model and generalized to III-V optoelectronic sensors.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.2007.911421</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Carriers ; Dynamics ; GaAs ; Gallium arsenide ; heavy ion ; high frequency ; High speed ; high-injection effects ; III-V ; III-V semiconductor materials ; ion track structure ; Laser modes ; Lasers ; Optoelectronic and photonic sensors ; Optoelectronics ; Photodetectors ; picosecond laser ; Plasma density ; Plasma devices ; Plasma displays ; Plasma properties ; Sensors ; Shape ; Silicon ; space-charge screening ; transient current ; ultrafast</subject><ispartof>IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2384-2393</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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The results collected are discussed within the framework of the Edmonds charge collection model and generalized to III-V optoelectronic sensors.</description><subject>Carriers</subject><subject>Dynamics</subject><subject>GaAs</subject><subject>Gallium arsenide</subject><subject>heavy ion</subject><subject>high frequency</subject><subject>High speed</subject><subject>high-injection effects</subject><subject>III-V</subject><subject>III-V semiconductor materials</subject><subject>ion track structure</subject><subject>Laser modes</subject><subject>Lasers</subject><subject>Optoelectronic and photonic sensors</subject><subject>Optoelectronics</subject><subject>Photodetectors</subject><subject>picosecond laser</subject><subject>Plasma density</subject><subject>Plasma devices</subject><subject>Plasma displays</subject><subject>Plasma properties</subject><subject>Sensors</subject><subject>Shape</subject><subject>Silicon</subject><subject>space-charge screening</subject><subject>transient current</subject><subject>ultrafast</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kU1vEzEQhi0EEqH0zIGLxQH1sqnHH1n7iMJHV6qo1A1cLcc7oQ4bO9i7h_77OkrFgQOn0Yyed0ajh5B3wJYAzFxvvvdLzli7NACSwwuyAKV0A6rVL8mCMdCNkca8Jm9K2ddWKqYWZNo8IL1PI9K0o12KdJOd_037Kc9-mnMdR3oTfj00Xdyjn0Jt1y7ngJl-fozuEHyh4Rnpj4gD7QN1caBd1zU_6d1xSjjWYE4xeNpjLCmXt-TVzo0FL5_rBfnx9ctmfdPc3n3r1p9uGy8Un5rBr6RoXasl13KHyBUoHDiXW7ZtPUqtWzkAMg8rZZjRUuC2DoXWnG2VW4kL8vG895jTnxnLZA-heBxHFzHNxQqphAYJFbz6LwirFoTgWrCKfvgH3ac5x_qGNcCh5WBOh6_PkM-plIw7e8zh4PKjBWZPtmy1ZU-27NlWTbw_JwIi_qWlMNUSF08KMI3N</recordid><startdate>20071201</startdate><enddate>20071201</enddate><creator>Laird, J.S.</creator><creator>Onoda, S.</creator><creator>Hirao, T.</creator><creator>Edmonds, L.</creator><creator>Ohshima, T.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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science</jtitle><stitle>TNS</stitle><date>2007-12-01</date><risdate>2007</risdate><volume>54</volume><issue>6</issue><spage>2384</spage><epage>2393</epage><pages>2384-2393</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>The role of ion track structure on high-injection carrier dynamics in a high-speed GaAs p + -n-n + sensor is investigated using laser and high-energy heavy ion microbeams. 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| subjects | Carriers Dynamics GaAs Gallium arsenide heavy ion high frequency High speed high-injection effects III-V III-V semiconductor materials ion track structure Laser modes Lasers Optoelectronic and photonic sensors Optoelectronics Photodetectors picosecond laser Plasma density Plasma devices Plasma displays Plasma properties Sensors Shape Silicon space-charge screening transient current ultrafast |
| title | The Role of Ion Track Structure on High-Injection Carrier Dynamics in High-Speed Si and III-V Optoelectronic Sensors |
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